Andreev reflection in Si-engineered Al/InGaAs hybrid junctions

Details Andreev reflection in Si-engineered Al/InGaAs hybrid junctions Andreev reflection in Si-engineered Al/InGaAs hybrid junctions

1998-11-24

arxiv.org/abs/cond-mat/9811338v1

Physics

Condensed Matter

Superconductivity

9 REVTEX pages + 3 postscript figures, to be published in APL 73, (28dec98)

Scientific paper

10.1063/1.122926

Andreev-reflection dominated transport is demonstrated in Al/n-In0.38Ga0.62As superconductor-semiconductor junctions grown by molecular beam epitaxy on GaAs(001). High junction transparency was achieved in low-doped devices by exploiting Si interface bilayers to suppress the native Schottky barrier. It is argued that this technique is ideally suited for the fabrication of ballistic transport hybrid microstructures.

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