Anderson Transition in Disordered Bilayer Graphene

Details Anderson Transition in Disordered Bilayer Graphene Anderson Transition in Disordered Bilayer Graphene

2010-02-23

arxiv.org/abs/1002.4306v1

J. Phys.: Condens. Matter 22 (2010) 255503

Physics

Condensed Matter

Disordered Systems and Neural Networks

Scientific paper

10.1088/0953-8984/22/25/255503

Employing the Kernel Polynomial method (KPM), we study the electronic properties of the graphene bilayers in the presence of diagonal disorder, within the tight-binding approximation. The KPM method enables us to calculate local density of states (LDOS) without need to exactly diagonalize the Hamiltonian. We use the geometrical averaging of the LDOS's at different lattice sites as a criterion to distinguish the localized states from extended ones. We find that bilayer graphene undergoes Anderson metal-insulator transition at a critical value of disorder strength.

Affiliated with

Also associated with

No associations

Rating

Anderson Transition in Disordered Bilayer Graphene does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Anderson Transition in Disordered Bilayer Graphene, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Anderson Transition in Disordered Bilayer Graphene will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-170164