Anderson localization in carbon nanotubes: defect density and temperature effects

Details Anderson localization in carbon nanotubes: defect density and temperature effects Anderson localization in carbon nanotubes: defect density and temperature effects

2005-11-10

arxiv.org/abs/cond-mat/0511265v1

Physical Review Letters 95 (2005) 266801

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.95.266801

The role of irradiation induced defects and temperature in the conducting properties of single-walled (10,10) carbon nanotubes has been analyzed by means of a first-principles approach. We find that di-vacancies modify strongly the energy dependence of the differential conductance, reducing also the number of contributing channels from two (ideal) to one. A small number of di-vacancies (5-9) brings up strong Anderson localization effects and a seemly universal curve for the resistance as a function of the number of defects. It is also shown that low temperatures, around 15-65 K, are enough to smooth out the fluctuations of the conductance without destroying the exponential dependence of the resistivity as a function of the tube length.

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