Analyzing capacitance-voltage measurements of vertical wrapped-gated nanowires

Details Analyzing capacitance-voltage measurements of vertical wrapped-gated nanowires Analyzing capacitance-voltage measurements of vertical wrapped-gated nanowires

2008-08-21

arxiv.org/abs/0808.2924v1

Nanotechnology 19, 435201 (2008)

Physics

Condensed Matter

Other Condensed Matter

15 pages, 6 Figures included, to appear in Nanotechnology

Scientific paper

10.1088/0957-4484/19/43/435201

The capacitance of arrays of vertical wrapped-gate InAs nanowires are analyzed. With the help of a Poisson-Schr"odinger solver, information about the doping density can be obtained directly. Further features in the measured capacitance-voltage characteristics can be attributed to the presence of surface states as well as the coexistence of electrons and holes in the wire. For both scenarios, quantitative estimates are provided. It is furthermore shown that the difference between the actual capacitance and the geometrical limit is quite large, and depends strongly on the nanowire material.

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