Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2010-01-11
Eur. Phys. J. B 72, 183-191 (2009)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
Scientific paper
10.1140/epjb/e2009-00348-3
In this paper we study analytically a one-dimensional model for a semiconductor-metal junction. We study the formation of Tamm states and how they evolve when the semi-infinite semiconductor and metal are coupled together. The non-linear current, as a function of the bias voltage, is studied using the non-equilibrium Green's function method and the density matrix of the interface is given. The electronic occupation of the sites defining the interface has strong non-linearities as function of the bias voltage due to strong resonances present in the Green's functions of the junction sites. The surface Green's function is computed analytically by solving a quadratic matrix equation, which does not require adding a small imaginary constant to the energy. The wave function for the surface states is given.
No associations
LandOfFree
Analytical study of non-linear transport across a semiconductor-metal junction does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Analytical study of non-linear transport across a semiconductor-metal junction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Analytical study of non-linear transport across a semiconductor-metal junction will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-719040