Analytical Model of Spin-Polarized Semiconductor Lasers

Details Analytical Model of Spin-Polarized Semiconductor Lasers Analytical Model of Spin-Polarized Semiconductor Lasers

2008-06-25

arxiv.org/abs/0806.4209v1

Appl. Phys. Lett. 93, 042513 (2008)

Physics

Condensed Matter

Other Condensed Matter

4 pages, 3 figures

Scientific paper

10.1063/1.2967739

We formulate an analytical model for vertical-cavity surface-emitting lasers (VCSELs) with injection (pump) of spin-polarized electrons. Our results for two different modes of carrier recombination allow for a systematic analysis of the operational regimes of the spin-VCSELs. We demonstrate that threshold reduction by electrically-pumped spin-polarized carriers can be larger than previously assumed possible. Near the threshold, such VCSELs can act as effective non-linear filters of circularly-polarized light, owing to their spin-dependent gain.

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