Analytical model of 1D Carbon-based Schottky-Barrier Transistors

Details Analytical model of 1D Carbon-based Schottky-Barrier Transistors Analytical model of 1D Carbon-based Schottky-Barrier Transistors

2009-09-21

arxiv.org/abs/0909.3736v1

IEEE Trans. El. Dev. 57(7) 1616 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1109/TED.2010.2049219

Nanotransistors typically operate in far-from-equilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs), taking into account on equal footing both SB contacts and FFE transport regime. Intermediate transport is introduced within the Buttiker probe approach to dissipative transport, in which a non-ballistic transistor is seen as a suitable series of individually ballistic channels. Our model permits the study of the interplay of SBs and ambipolar FFE transport, and in particular of the transition between SB-limited and dissipation-limited transport.

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