Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs

Details Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs Analytical determination of the reach-through breakdown voltage of bipolar transistors, asymmetric thyristors and Punch Through-IGBTs

2006-09-15

arxiv.org/abs/cond-mat/0609368v1

Physics

Condensed Matter

Materials Science

4 pages, 1 figure

Scientific paper

In this work, an analytical formula that gives the reach-through breakdown
voltage of bipolar transistors, asymmetric thyristors, Punch Through-IGBTs and
other devices with similar structure is deduced for the first time.

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