Physics
Scientific paper
Feb 1989
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989nimpb..37..563f&link_type=abstract
Nuclear Instruments and Methods in Physics Research Section B, Volume 37, p. 563-567.
Physics
7
Scientific paper
One of the Greater Silicon Valley Implant Users' Group's recent activities has been to sponsor a round-robin on charging damage, where identical wafers were implanted on three different state-of-the-art, high-current ion implanters. The devices studied were thin-dielectric (250 Å SiO2), polysilicon-gate MOS capacitors isolated by thick field oxide. The three implanters involved were the Varian/Extrion 160XP, the Eaton/Nova 10-80, and the Applied Materials PI9000. Each implanter vendor was given 48 wafers to implant with 100 keV As+ ions at a dose of 1 × 1016 cm-2. Parameters that were varied include the beam current, electron flood gun current, and chamber pressure. The charge-to-breakdown, breakdown voltage, and leakage current of several devices before anneal have been measured. The results from these tests were inconclusive as to the physical mechanism of charging and as to the effectiveness of techniques to reduce its impact on devices. However, the methodology of this study is discussed in detail to aid in the planning of future experiments.
Authors' industrial affiliations: S.B. Felch, Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303, USA; L.A. Larson, National Semiconductor Corp., P.O. Box 58090, Santa Clara, CA 95052-8090, USA; M.I. Current, Applied Materials, 3050 Bowers Ave., Santa Clara, CA 95054, USA; D.W. Lindsey, Eaton/NOVA, 931 Benicia Ave, Sunnyvale, CA 94086, USA.
Current M. I.
Felch S. B.
Larson A. L.
Lindsey D. W.
No associations
LandOfFree
Analysis techniques of charging damage studied on three different high-current ion implanters does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Analysis techniques of charging damage studied on three different high-current ion implanters, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Analysis techniques of charging damage studied on three different high-current ion implanters will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1885398