Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

Details Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

2010-06-22

arxiv.org/abs/1006.4212v1

Journal of Electronic Materials, January 2010 (published online)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

19 pages, 4 figures

Scientific paper

10.1007/s11664-009-1035-5

Low dimensional materials provide the possibility of improved thermoelectric performance due to the additional length scale degree of freedom for engineering their electronic and thermal properties. As a result of suppressed phonon conduction, large improvements on the thermoelectric figure of merit, ZT, have been recently reported in nanostructures, compared to the raw materials' ZT values. In addition, low dimensionality can improve a device's power factor, offering an additional enhancement in ZT. In this work the atomistic sp3d5s*-spin-orbit-coupled tight-binding model is used to calculate the electronic structure of silicon nanowires (NWs). The Landauer formalism is applied to calculate an upper limit for the electrical conductivity, the Seebeck coefficient, and the power factor. We examine n-type and p-type nanowires of diameters from 3nm to 12nm, in [100], [110], and [111] transport orientations at different doping concentrations. Using experimental values for the lattice thermal conductivity in nanowires, an upper limit for ZT is computed. We find that at room temperature, scaling the diameter below 7nm can at most double the power factor and enhance ZT. In some cases, however, scaling does not enhance the performance at all. Orientations, geometries, and subband engineering techniques for optimized designs are discussed.

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