Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier

Details Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier

2003-02-11

arxiv.org/abs/cond-mat/0302221v1

Appl. Phys. Lett. 82, 4092 (2003)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, submitted to APL

Scientific paper

10.1063/1.1580631

Electron spin polarizations of 32% are obtained in a GaAs quantum well via electrical injection through a reverse-biased Fe/AlGaAs Schottky contact. An analysis of the transport data using the Rowell criteria demonstrates that single step tunneling is the dominant transport mechanism. The current-voltage data show a clear zero-bias anomaly and phonon signatures corresponding to the GaAs-like and AlAs-like longitudinal-optical phonon modes of the AlGaAs barrier, providing further evidence for tunneling. These results provide experimental confirmation of several theoretical analyses indicating that tunneling enables significant spin injection from a metal into a semiconductor.

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