Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening

Details Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening

2000-04-18

arxiv.org/abs/cond-mat/0004312v2

Phys. Rev. Lett., Vol. 85 No. 20, p.4357, Nov 2000

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.85.4357

We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behaviour which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi-liquid describes our data in spite of the large r_s = 8.

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