Analysis of integrated single-electron memory operation

Details Analysis of integrated single-electron memory operation Analysis of integrated single-electron memory operation

2002-06-02

arxiv.org/abs/cond-mat/0206016v1

J. Appl. Phys. 92, 7291 (2002)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages

Scientific paper

10.1063/1.1521788

Various aspects of single-electron memory are discussed. In particular, we
analyze the single-electron charging by Fowler-Nordheim tunneling, propose the
idea of background charge compensation, and discuss the defect-tolerant
architecture based on nanofuses.

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