Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2010-11-16
Appl. Phys. Lett. 97, 033504 (2010)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
Scientific paper
10.1063/1.3466908
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and steeper subthreshold swing as compared to conventional tunneling transistors. This is due to an additional tunneling contribution to current stemming from band overlap along the body thickness. However, a critical thickness is necessary to obtain this advantage derived from 'vertical' tunneling. In addition, in ultra small InAs TFET devices, the subthreshold swing could be severely affected by direct source-to-drain tunneling through the body.
Ganapathi Kartik
Salahuddin Sayeef
Yoon* Youngki
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