Analysis of electric-field-induced spin splitting in wide modulation-doped quantum wells

Details Analysis of electric-field-induced spin splitting in wide modulation-doped quantum wells Analysis of electric-field-induced spin splitting in wide modulation-doped quantum wells

2007-12-29

arxiv.org/abs/0801.0089v2

Phys. Rev. B 78, 205317 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Modified version, now published. 10 pages, 3 figures, 2 tables

Scientific paper

10.1103/PhysRevB.78.205317

We analyze the proper inclusion of electric-field-induced spin splittings in the framework of the envelope function approximation. We argue that the Rashba effect should be included in the form of a macroscopic potential as diagonal terms in a multiband approach rather than the commonly used Rashba term dependent on k and electric field. It is pointed out that the expectation value of the electric field in a subband is sometimes not unique because the expectation values can even have opposite signs for the spin-split subband components. Symmetric quantum wells with Dresselhaus terms and the influence of the interfaces on the spin splitting are also discussed. We apply a well established multiband approach to wide modulation-doped InGaSb quantum wells with strong built-in electric fields in the interface regions. We demonstrate an efficient mechanism for switching on and off the Rashba splitting with an electric field being an order of magnitude smaller than the local built-in field that determines the Rashba splitting. The implications of our findings for spintronic devices, in particular the Datta-Das spin transistor and proposed modifications of it, are discussed.

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