Analysis of efficiency limiting processes in thin film Cu(In,Ga)(S,Se)2 electrodeposited solar cells

Details Analysis of efficiency limiting processes in thin film Cu(In,Ga)(S,Se)2 electrodeposited solar cells Analysis of efficiency limiting processes in thin film Cu(In,Ga)(S,Se)2 electrodeposited solar cells

2010-06-05

arxiv.org/abs/1006.1058v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Preprint for submission to the 20th EUPVSEC, Barcelona, Spain, 2005, 4 pages pp. 1851 - 1854

Scientific paper

Electrodeposited thin film cells have been fabricated with record-breaking efficiencies of 11.4%. This presentation examines conversion mechanisms in cells with a focus on the effect of CdS buffer layers using a range of complementary tools. Dark currents (IVs) are well described by series and parallel resistances, and two dominant recombination mechanisms represented by parallel diodes. Measurements of IV as a function of temperature (IVT) allow extraction of activation energies corresponding to these processes and indicate their spatial position. Admittance spectroscopy (AS) gives an independent estimate of the same energies, and yields values of the defect densities of states in the forbidden gap. Two dominant levels are apparent, confirming the validity of the IV analysis. Spectral response (QE) measurements are presented, yielding information on minority carrier collection efficiency. The different methods of parameter extraction are correlated and indicate recombination levels some hundreds of meV above the valence band and below the conduction band. Bias dependence of admittance spectroscopy gives indications on the localisation of defect centres with one defect situated at the CdS heterointerface and the other in the bulk of the depletion region. The dark current analysis indicates that photogenerated minority carrier collection is the limiting factor in these cells at the operating bias.

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