An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device

Details An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device

1999-02-03

arxiv.org/abs/cond-mat/9902057v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures

Scientific paper

10.1103/PhysRevB.60.7764

We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either parallel or antiparallel to each other in different applied magnetic fields. The conducting medium was a two dimensional electron gas (2DEG) formed in an AlSb/InAs quantum well. Data from this device suggest that its resistance is controlled by two different types of spin-valve effect: the first occurring at the ferromagnet-2DEG interfaces; and the second occuring in direct propagation between contacts.

Affiliated with

Also associated with

No associations

Rating

An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-147764