An ion-implanted silicon single-electron transistor

Details An ion-implanted silicon single-electron transistor An ion-implanted silicon single-electron transistor

2005-10-14

arxiv.org/abs/cond-mat/0510373v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures

Scientific paper

We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e$^2$/2C$_\Sigma$ $\sim$ 250 $\mu$eV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques.

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