An Investigation of Orientational Symmetry-Breaking Mechanisms in High Landau Levels

Details An Investigation of Orientational Symmetry-Breaking Mechanisms in High Landau Levels An Investigation of Orientational Symmetry-Breaking Mechanisms in High Landau Levels

2001-04-12

arxiv.org/abs/cond-mat/0104243v2

Solid State Commun. 119, 89 (2001)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Reference added, minor notational changes; final published version

Scientific paper

10.1016/S0038-1098(01)00212-5

The principal axes of the recently discovered anisotropic phases of 2D electron systems at high Landau level occupancy are consistently oriented relative to the crystal axes of the host semiconductor. The nature of the native rotational symmetry breaking field responsible for this preferential orientation remains unknown. Here we report on experiments designed to investigate the origin and magnitude of this symmetry breaking field. Our results suggest that neither micron-scale surface roughness features nor the precise symmetry of the quantum well potential confining the 2D system are important factors. By combining tilted field transport measurements with detailed self-consistent calculations we estimate that the native anisotropy energy, whatever its origin, is typically ~ 1 mK per electron.

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