An intrinsic mobility ceiling of Si bulk

Details An intrinsic mobility ceiling of Si bulk An intrinsic mobility ceiling of Si bulk

2011-09-06

arxiv.org/abs/1109.1311v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 2 figures

Scientific paper

We compute by Density Functional Theory-Non Equilibrium Green Functions
Formalism (DFT-NEGFF) the conductance of bulk Si along different
crystallographic directions. We find a ceiling value for the intrinsic mobility
of bulk silicon of $8.4\cdot10^6 cm^2/V\cdot s$. We suggest that this result is
related to the lowest effective mass of the $<001>$ direction.

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