AMR and magnetometry studies of ultra thin GaMnAs films

Details AMR and magnetometry studies of ultra thin GaMnAs films AMR and magnetometry studies of ultra thin GaMnAs films

2006-10-25

arxiv.org/abs/cond-mat/0610692v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Accepted for publication in Physica Status Solidi C

Scientific paper

We have measured the Anisotropic Magnetoresistance (AMR) of ultra thin (5nm) Ga(0.95)Mn(0.05)As films. We find that the sign of the AMR can be positive or negative, which may depend on the direction of the current with respect to the crystal. At low temperatures, transport measurements and SQUID magnetometry suggest that the magnetisation has a component pointing out of the plane of the film.

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