Amorphous interface layer in thin graphite films grown on the carbon face of SiC

Details Amorphous interface layer in thin graphite films grown on the carbon face of SiC Amorphous interface layer in thin graphite films grown on the carbon face of SiC

2011-05-10

arxiv.org/abs/1105.2057v1

Physics

Condensed Matter

Materials Science

Scientific paper

Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not to cover the entire interface, but uniform contiguous regions span microns of cross-sectional interface. Annular dark field scanning transmission electron microscopy (ADF-STEM) images and electron energy loss spectroscopy (EELS) demonstrate that the amorphous layer is a carbon-rich composition of Si/C. The amorphous layer is clearly observed in samples grown at 1600{\deg}C for a range of growth pressures in argon, but not at 1500{\deg}C, suggesting a temperature-dependent formation mechanism.

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