Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid

Details Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid Ambipolar transport in bulk crystals of a topological insulator by gating with ionic liquid

2012-03-09

arxiv.org/abs/1203.2047v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

We report that the ionic-liquid gating of bulk single crystals of a topological insulator can control the type of the surface carriers and even results in ambipolar transport. This was made possible by the use of highly bulk-insulating BiSbTeSe2 system where the chemical potential is located close to the surface Dirac point. Thanks to the use of ionic liquid, the control of the surface chemical potential by gating was possible on the whole surface of a bulk three-dimensional sample, opening new experimental opportunities for topological insulators.

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