Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates

Details Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates

2010-03-30

arxiv.org/abs/1003.5855v2

APPLIED PHYSICS LETTERS 96, 263110 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.3459136

We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compared to grounding the back gate, consistent with the finding from electrostatic simulation.

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