Ambipolar gate effect and low temperature magnetoresistance of ultrathin La0.8Ca0.2MnO3 Films

Details Ambipolar gate effect and low temperature magnetoresistance of ultrathin La0.8Ca0.2MnO3 Films Ambipolar gate effect and low temperature magnetoresistance of ultrathin La0.8Ca0.2MnO3 Films

2004-07-23

arxiv.org/abs/cond-mat/0407606v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.94.037204

Ultrathin La0.8Ca0.2MnO3 films have been measured in a field-effect geometry. The electric field due to the gate produces a large ambipolar decrease in resistance at low temperatures. This is attributed to the development of a pseudogap in the density of states and the couple of localized charge to strain. The gate effect and mangetoresistance are interpreted in a consistent framework. The implications for the low temperature behavior of a manganite film in the two dimensional limit are discussed.

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