AlxGa1-xN p-i-n photodiodes on sapphire substrates

Details AlxGa1-xN p-i-n photodiodes on sapphire substrates AlxGa1-xN p-i-n photodiodes on sapphire substrates

Apr 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..193w&link_type=abstract

Proc. SPIE Vol. 3629, p. 193-198, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.

Physics

1

Scientific paper

We report the fabrication and characterization of Al(subscript x)Ga(subscript 1-x)N p-i-n photodiodes (0.05 less than or equal to X less than or equal to 0.30) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible-rejection of about four orders of magnitude with a cutoff wavelength that shifts from 350 nm to 291 nm. They also exhibit a constant responsivity for five decades (30 mW/m(superscript 2) to 1 kW/m(superscript 2)) of optical power density. Using capacitance measurements, the values for the acceptor concentration in the p-Al(subscript x)Ga(subscript 1-x)N region and the unintentional donor concentration in the intrinsic region are found. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances the transient response becomes non- exponential, with a decay time longer than the RC constant.

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