Alloying mechanisms for epitaxial nanocrystals

Details Alloying mechanisms for epitaxial nanocrystals Alloying mechanisms for epitaxial nanocrystals

2007-01-29

arxiv.org/abs/cond-mat/0701710v2

Physics

Condensed Matter

Materials Science

Scientific paper

The different mechanisms involved in the alloying of epitaxial nanocrystals are reported in this letter. Intermixing during growth, surface diffusion and intra-island diffusion were investigated by varying the growth conditions and annealing environments during chemical vapor deposition. The relative importance of each mechanism was evaluated in determining a particular composition profile for dome-shaped Ge:Si (001) islands. For samples grown at a faster rate, intermixing during growth was reduced. Si surface diffusion dominates during H$_2$ annealing whereas Ge surface diffusion and intra-island diffusion prevail during annealing in a PH$_3$ environment.

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