Alloy effects in GaInN/GaN heterostructures

Details Alloy effects in GaInN/GaN heterostructures Alloy effects in GaInN/GaN heterostructures

2003-11-06

arxiv.org/abs/cond-mat/0311133v1

Solid State Communications 130 (2004) 751

Physics

Condensed Matter

submitted to Applied Physics Letter

Scientific paper

We show that the large band offsets between GaN and InN and the heavy carrier
effective masses preclude the use of the Virtual Crystal Approximation to
describe the electronic structure of Ga_(1-x)In_(x)N/GaN heterostructures while
this approximation works very well for the Ga_(1-x)In_(x)As/GaAs
heterostructures.

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