All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode

Details All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode

2006-08-21

arxiv.org/abs/cond-mat/0608453v1

Phys. Rev. B 74, 241302(R) (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.74.241302

Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk semiconductor ($n$-GaAs) via schottky contact. For detection, a diluted magnetic semiconductor ($p$-GaMnAs) layer is used. Clear magnetoresistance was observed only when a high forward bias was applied across the $p$-$n$ junction.

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