AlGaN/GaN Heterostructure Transit-Time Devices: A Novel Device Concept for Submillimeter-Wave Sources

Details AlGaN/GaN Heterostructure Transit-Time Devices: A Novel Device Concept for Submillimeter-Wave Sources AlGaN/GaN Heterostructure Transit-Time Devices: A Novel Device Concept for Submillimeter-Wave Sources

May 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005stt..conf..382e&link_type=article

Sixteenth International Symposium on Space Terahertz Technology, held May 2-4, 2005 at Chalmers University of Technology. Göte

Physics

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