Aharonov-Casher effect in Bi$_{\rm 2}$Se$_{\rm 3}$ square-ring interferometers

Details Aharonov-Casher effect in Bi$_{\rm 2}$Se$_{\rm 3}$ square-ring interferometers Aharonov-Casher effect in Bi$_{\rm 2}$Se$_{\rm 3}$ square-ring interferometers

2011-03-31

arxiv.org/abs/1103.6115v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

Electrical control of spin dynamics in Bi$_{\rm 2}$Se$_{\rm 3}$ was investigated in ring-type interferometers. Aharonov-Bohm and Altshuler-Aronov-Spivak resistance oscillations against magnetic field, and Aharorov-Casher resistance oscillations against gate voltage were observed in the presence of a Berry phase of $\pi$. A very large tunability of spin precession angle by gate voltage has been obtained, indicating that Bi$_{\rm 2}$Se$_{\rm 3}$-related materials with strong spin-orbit coupling are promising candidates for constructing novel spintronic devices.

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