Aharonov-Bohm effect in a side-gated graphene ring

Details Aharonov-Bohm effect in a side-gated graphene ring Aharonov-Bohm effect in a side-gated graphene ring

2009-04-08

arxiv.org/abs/0904.1364v2

New J. Phys. 12; 043054 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1088/1367-2630/12/4/043054

We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of pi in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be well interpreted within existing models for 'dirty metals' giving a phase coherence length of the order of 1 micrometer at a temperature of 500mK.

Affiliated with

Also associated with

No associations

Rating

Aharonov-Bohm effect in a side-gated graphene ring does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Aharonov-Bohm effect in a side-gated graphene ring, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aharonov-Bohm effect in a side-gated graphene ring will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-214759