Aging and memory in a two-dimensional electron system in Si

Details Aging and memory in a two-dimensional electron system in Si Aging and memory in a two-dimensional electron system in Si

2009-11-06

arxiv.org/abs/0911.1343v1

Physica B 404, 466-469 (2009)

Physics

Condensed Matter

Strongly Correlated Electrons

Proceedings of ECRYS-2008

Scientific paper

The relaxations of conductivity after a temporary change of carrier density n_s during the waiting time t_w have been studied in a strongly disordered two-dimensional electron system in Si. At low enough n_s < n_g (n_g - the glass transition density), the nonexponential relaxations exhibit aging and memory effects at low temperatures T. The aging properties change abruptly at the critical density for the metal-insulator transition n_c < n_g. The observed complex dynamics of the electronic transport is strikingly similar to that of other systems that are far from equilibrium.

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