Adittional levels between Landau bands due to vacancies in graphene: towards a defect engineering

Details Adittional levels between Landau bands due to vacancies in graphene: towards a defect engineering Adittional levels between Landau bands due to vacancies in graphene: towards a defect engineering

2008-07-14

arxiv.org/abs/0807.2247v2

Phys. Rev. B 78, 125402 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 4 figures, few comments added after referees - accepted to publication in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.78.125402

We describe the effects of vacancies on the electronic properties of a graphene sheet in the presence of a perpendicular magnetic field: from a single defect to an organized vacancy lattice. An isolated vacancy is the minimal possible inner edge, showing an antidotlike behaviour, which results in an extra level between consecutive Landau levels. Two close vacancies may couple to each other, forming a vacancy molecule tuned by the magnetic field. We show that a vacancy lattice introduce an extra band in between Landau levels with localization properties that could lead to extra Hall resistance plateaus.

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