Active RF pulse compression using an electrically controlled semiconductor switch

Details Active RF pulse compression using an electrically controlled semiconductor switch Active RF pulse compression using an electrically controlled semiconductor switch

Nov 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006njph....8..293g&link_type=abstract

New Journal of Physics, Volume 8, Issue 11, pp. 293 (2006).

Physics

Scientific paper

First we review the theory of active pulse compression systems using resonant delay lines. Then we describe the design of an electrically controlled semiconductor active switch. The switch comprises an active window and an overmoded waveguide three-port network. The active window is based on a four-inch silicon wafer which has 960 PIN diodes. These are spatially combined in an overmoded waveguide. We describe the philosophy and design methodology for the three-port network and the active window. We then present the results of using this device to compress 11.4 GHz RF signals with high compression ratios. We show how the system can be used with amplifier-like sources, in which one can change the phase of the source by manipulating the input to the source. We also show how the active switch can be used to compress a pulse from an oscillator-like source, which is not possible with passive pulse compression systems.

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