Activation mechanisms for charge noise

Details Activation mechanisms for charge noise Activation mechanisms for charge noise

2012-02-24

arxiv.org/abs/1202.5350v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Measurements of the temperature and bias dependence of Single Electron Transistors (SETs) show that charge noise increases linearly with temperature above a voltage-dependent threshold temperature, and that its low temperature saturation is due to self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with hot electrons on the SET island, and at a temperature significantly higher than that of the substrate. We suggest that the noise is caused by electrons tunneling between the island and nearby potential wells.

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