Acoustoelectric luminescence from a field-effect n-i-p lateral junction

Details Acoustoelectric luminescence from a field-effect n-i-p lateral junction Acoustoelectric luminescence from a field-effect n-i-p lateral junction

2009-03-06

arxiv.org/abs/0903.1230v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3106108

A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon-source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.

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