Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure

Details Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure

2009-06-15

arxiv.org/abs/0906.2653v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 7 figures, 1 table

Scientific paper

Measurement results of the acoustoelectric effects (surface acoustic waves (SAW) attenuation and velocity) in a high-mobility $p$-SiGe/Ge/SiGe structure are presented. The structure was LEPECVD grown with a two dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5 - 4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time $\tau_{\varepsilon}$ and the deformation potential constant determined.

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