Acoustic Phonon-Assisted Resonant Tunneling via Single Impurities

Details Acoustic Phonon-Assisted Resonant Tunneling via Single Impurities Acoustic Phonon-Assisted Resonant Tunneling via Single Impurities

2004-02-26

arxiv.org/abs/cond-mat/0402660v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

accepted in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.69.165302

We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the $I(V)$ characteristics measured at 30mK, the contribution of individual donors is resolved and the fingerprints of phonon assistance in the tunneling process are seen. The latter is confirmed by detailed analysis of the tunneling rates and the modeling of the resonant tunneling contribution to the current. Moreover, fluctuations of the local structure of the DOS (LDOS) and Fermi edge singularities are observed.

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