Accumulation and depletion layer thicknesses in organic field effect transistors

Details Accumulation and depletion layer thicknesses in organic field effect transistors Accumulation and depletion layer thicknesses in organic field effect transistors

2003-10-31

arxiv.org/abs/cond-mat/0310756v1

Physics

Condensed Matter

Materials Science

3 pages, 4 figures, Jap. J. Appl. Phys. in press

Scientific paper

10.1143/JJAP.42.L1408

We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in-situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm (VG=-15 V) and 5 nm (VG=15 V).

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