AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors

Details AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors AC-coupled GaAs microstrip detectors with a new type of integrated bias resistors

1997-09-30

arxiv.org/abs/physics/9709041v1

Nucl.Instrum.Meth. A406 (1998) 427-434

Physics

Instrumentation and Detectors

20 pages, 9 figures, to be published in NIM A

Scientific paper

10.1016/S0168-9002(98)00007-2

Full size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3'' substrate wafers. PECVD deposited SiO_2 and SiO_2/Si_3N_4 layers were used to provide coupling capacitaces of 32.5 pF/cm and 61.6 pF/cm, respectively. The resistors are made of sputtered CERMET using simple lift of technique. The sheet resistivity of 78 kOhm/sq. and the thermal coefficient of resistance of less than 4x10^-3 / degree C satisfy the demands of small area biasing resistors, working on a wide temperature range.

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