Absence of nonlocal resistance in microstructures of PbTe quantum wells

Details Absence of nonlocal resistance in microstructures of PbTe quantum wells Absence of nonlocal resistance in microstructures of PbTe quantum wells

2011-11-10

arxiv.org/abs/1111.2433v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures, to be submitted to Phys. Rev B

Scientific paper

We report on experiments allowing to set upper limits on conductance by edge channels and on the magnitude of the spin Hall effect in PbTe, a narrow-gap semiconductor whose band structure is strongly modified by relativistic effects. Measurements have been performed on H-shaped microstructures of 12 nm thick strain PbTe quantum wells embedded between Pb_0.92Eu_0.08Te barriers. The structures have different geometrical dimensions corresponding to both diffusive and ballistic electron transport in non-equivalent L valleys. No edge transport is detected and the magnitude of spin Hall angle ? is estimated to be smaller than 0.02 for structures in the diffusive regime.

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