Absence of Localization in Certain Field Effect Transistors

Details Absence of Localization in Certain Field Effect Transistors Absence of Localization in Certain Field Effect Transistors

1997-10-29

arxiv.org/abs/cond-mat/9710315v2

Physics

Condensed Matter

Strongly Correlated Electrons

8 pages, LaTeX, figure label changed

Scientific paper

10.1006/spmi.1997.0526

We review some experimental and theoretical results on the metal-to-insulator transition (MIT) observed at zero magnetic field (B=0) in several two-dimensional electron systems (2DES). Scaling of the conductance and magnetic field dependence of the conductance provide convincing evidence that the MIT is driven by Coulomb interactions among the carriers and is dramatically sensitive to spin polarization of the carriers.

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