Ab initio study of the interface properties of Fe/GaAs(110)

Details Ab initio study of the interface properties of Fe/GaAs(110) Ab initio study of the interface properties of Fe/GaAs(110)

2009-08-10

arxiv.org/abs/0908.1282v2

Phys. Rev. B 80, 064417 (2009)

Physics

Condensed Matter

Materials Science

9 pages, 8 figures

Scientific paper

10.1103/PhysRevB.80.064417

We have investigated the initial growth of Fe on GaAs(110) by means of density functional theory. In contrast to the conventionally used (001)-surface the (110)-surface does not reconstruct. Therefore, a flat interface and small diffusion can be expected, which makes Fe/GaAs(110) a possible candidate for spintronic applications. Since experimentally, the actual quality of the interface seems to depend on the growth conditions, e.g., on the flux rate, we simulate the effect of different flux rates by different Fe coverages of the semiconductor surface. Systems with low coverages are highly diffusive. With increasing amount of Fe, i.e., higher flux rates, a flat interface becomes more stable. The magnetic structure strongly depends on the Fe coverage but no quenching of the magnetic moments is observed in our calculations.

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