Ab initio study of single molecular transistor modulated by gate-bias

Details Ab initio study of single molecular transistor modulated by gate-bias Ab initio study of single molecular transistor modulated by gate-bias

2006-05-06

arxiv.org/abs/cond-mat/0605156v1

Physics

Condensed Matter

Materials Science

14 pages, 7 figures

Scientific paper

10.1063/1.2337286

We use a self-consistent method to study the current of the single molecular transistor modulated by the transverse gate-bias in the level of the first-principles calculations. The numerical results show that both the polyacene-dithiol molecules and the fused-ring oligothiophene molecules are the potential high-frequency molecular transistor controlled by the transverse field. The long molecules of the polyacene-dithiol or the fused-ring thiophene are in favor of realizing the gate-bias controlled molecular transistor. The theoretical results suggest the related experiments.

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