Ab initio description of tunnel junctions

Details Ab initio description of tunnel junctions Ab initio description of tunnel junctions

2000-11-03

arxiv.org/abs/cond-mat/0011062v1

Physics

Condensed Matter

Materials Science

6 pages, 4 figures, subm. to J. Appl. Phys

Scientific paper

Based on spin-density functional theory we calculate the electronic structure of a tunnel junction consisting of two magnetic Fe layers separated by an insulating vacuum barrier selfconsistently. For the conductance the Landauer formula is evaluated in the ballistic limit as function of the magnetic configuration. Based on these conductances the tunnel magnetoresistance (TMR) ratio is obtained. We investigate the relation between TMR ratio and spin polarization of the electronic structure at the metal/insulator interface.

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