Ab Initio calculation of band gap renormalization in highly excited GaAs

Details Ab Initio calculation of band gap renormalization in highly excited GaAs Ab Initio calculation of band gap renormalization in highly excited GaAs

2004-01-22

arxiv.org/abs/cond-mat/0401407v2

Physics

Condensed Matter

Materials Science

14 pages, 7 figures, submitted Phys. Rev. B

Scientific paper

10.1103/PhysRevB.69.205204

We present ab initio quasiparticle self-energy calculations in crystalline GaAs for cases of intense electronic excitation (~ 10% of valence electrons excited into conduction band), relevant for high-intensity ultra-short pulsed laser experiments. Calculations are performed using an out-of-equilibrium generalization of the GW approximation based on the Keldysh Green's function approach. Our results indicate that while the band gap is a sensitive function of the amount of excitation, it is not possible to induce complete band gap closure in this system by purely electronic means.

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