A virtual intersubband spin-flip spin-orbit coupling induced spin relaxation in GaAs (110) quantum wells

Details A virtual intersubband spin-flip spin-orbit coupling induced spin relaxation in GaAs (110) quantum wells A virtual intersubband spin-flip spin-orbit coupling induced spin relaxation in GaAs (110) quantum wells

2009-07-13

arxiv.org/abs/0907.2092v2

Solid State Commun. 149, 2078 (2009).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4+ pages, 4 figures, to be published in Solid Stat. Commun

Scientific paper

10.1016/j.ssc.2009.08.015

A spin relaxation mechanism is proposed based on a second-order spin-flip intersubband spin-orbit coupling together with the spin-conserving scattering. The corresponding spin relaxation time is calculated via the Fermi golden rule. It is shown that this mechanism is important in symmetric GaAs (110) quantum wells with high impurity density. The dependences of the spin relaxation time on electron density, temperature and well width are studied with the underlying physics analyzed.

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