A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio

Details A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio

2010-12-06

arxiv.org/abs/1012.1105v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

A novel graphene transistor architecture is reported. The transistor has a
U-shape geometry and was fabricated using a gallium focused ion beam (FIB). The
channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded
10^5.

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