A U-shaped bilayer graphene channel transistor with a very high Ion/Ioff ratio

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

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Scientific paper

A novel graphene transistor architecture is reported. The transistor has a
U-shape geometry and was fabricated using a gallium focused ion beam (FIB). The
channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded
10^5.

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