A Three-dimensional simulation study of the performance of Carbon Nanotube Field Effect Transistors with doped reservoirs and realistic geometry

Details A Three-dimensional simulation study of the performance of Carbon Nanotube Field Effect Transistors with doped reservoirs and realistic geometry A Three-dimensional simulation study of the performance of Carbon Nanotube Field Effect Transistors with doped reservoirs and realistic geometry

2005-12-13

arxiv.org/abs/cond-mat/0512275v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Submitted to IEEE TED

Scientific paper

10.1109/TED.2006.878018

In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution of the 3D Poisson-Schroedinger equation with open boundary conditions, within the Non-Equilibrium Green's Function formalism, where arbitrary gate geometry and device architecture can be considered. The investigation of short channel effects for different gate configurations and geometry parameters shows that double gate devices offer quasi ideal subthreshold slope and DIBL without extremely thin gate dielectrics. Exploration of devices with parallel CNTs show that On currents per unit width can be significantly larger than the silicon counterpart, while high-frequency performance is very promising.

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